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See Product Specifications
| номер части: | 2N6052 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | de59b8a5968ca47dcf16750f8d83afef |
| Current - Collector (Ic) (Max): | acf70af5797317fd532641fd68230c32 |
| Voltage - Collector Emitter Breakdown (Max): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Vce Saturation (Max) @ Ib, Ic: | c9ec745437bb6841555d076181d6ea0a |
| Current - Collector Cutoff (Max): | 359456234a5a215cd67b37cce8b8442a |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | f53d894ba09d1892f0aecaeeb949ab46 |
| Power - Max: | 9b5578a35635ab11e6c7347a2364017e |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | 724015988cf8db99d1178f4bc356855a |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | acacc2b55ee43fad1b569abde9a9b21c |
| Supplier Device Package: | 54dbc4053bc3e0a11942cefbd575ac86 |
