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See Product Specifications
| номер части: | 2N6059 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 961eae0065d58eea563813a4d10cf3ac |
| Current - Collector (Ic) (Max): | acf70af5797317fd532641fd68230c32 |
| Voltage - Collector Emitter Breakdown (Max): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Vce Saturation (Max) @ Ib, Ic: | c9ec745437bb6841555d076181d6ea0a |
| Current - Collector Cutoff (Max): | 359456234a5a215cd67b37cce8b8442a |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | f53d894ba09d1892f0aecaeeb949ab46 |
| Power - Max: | 9b5578a35635ab11e6c7347a2364017e |
| Frequency - Transition: | 550516a79299d4aa4cb3d6655c89c3a8 |
| Operating Temperature: | 51a4dd9c15d0a730371e943785f48353 |
| Mounting Type: | 678457b2fd6f368ccd41b6654ad866df |
| Package / Case: | acacc2b55ee43fad1b569abde9a9b21c |
| Supplier Device Package: | d951b62dcd3ff3e2b9df0a3e52e82ddb |
