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See Product Specifications
| номер части: | 2N6123 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | 84ca31d47822b436e7a9e53e2a08b38a |
| Voltage - Collector Emitter Breakdown (Max): | ebd7aaeec2792ddf9fe1af48370ec717 |
| Vce Saturation (Max) @ Ib, Ic: | f71fe7cbb82fc0f7c6d10cce5cee3148 |
| Current - Collector Cutoff (Max): | 359456234a5a215cd67b37cce8b8442a |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 5a2bf4a2b255b3090e7bcb8f5c95f989 |
| Power - Max: | 7d0a65785ac5e60ff547642ae569e0de |
| Frequency - Transition: | 911988ba2fed2c0623f495600504d24b |
| Operating Temperature: | 55ce755c497e7a4a96e8f6d89292982a |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 46bb638de2ea693de650d7f1c3115468 |
| Supplier Device Package: | 21023271cb741070ebf3efcc38cc7f20 |
