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See Product Specifications
| номер части: | 2N6426 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 961eae0065d58eea563813a4d10cf3ac |
| Current - Collector (Ic) (Max): | 431e7d6cd9f66043047f49ab44061d9d |
| Voltage - Collector Emitter Breakdown (Max): | 628cbc3e45d5bacb32414a526acf56ef |
| Vce Saturation (Max) @ Ib, Ic: | e480edf90eb7670a95493068fb8206e4 |
| Current - Collector Cutoff (Max): | ead55925e8c07a2f78b816cf419138f6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 7a469d7f20d27b53849b7a83f352cd00 |
| Power - Max: | 8c699428d5776e26a0efa7665d6350bf |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 33b8f2b4a1eab7c435b522cfb19c06ce |
| Supplier Device Package: | 395bfae68d45c085ed421651828bcabf |
