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See Product Specifications
| номер части: | 2N6609 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | e1b0237f8fdb2a4d9d18cc8370423103 |
| Voltage - Collector Emitter Breakdown (Max): | 6f7ce75df69c251c115e97dd1e21e497 |
| Vce Saturation (Max) @ Ib, Ic: | 145284354a0388a3067e0d5b895b8267 |
| Current - Collector Cutoff (Max): | 238e4cb2eaf8213a58d10b14cd725d2d |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 1423a20e4b0d721f8d9e2de9d1147a11 |
| Power - Max: | 9b5578a35635ab11e6c7347a2364017e |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | 724015988cf8db99d1178f4bc356855a |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | acacc2b55ee43fad1b569abde9a9b21c |
| Supplier Device Package: | 54dbc4053bc3e0a11942cefbd575ac86 |
