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See Product Specifications
| номер части: | 2N6666 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | de59b8a5968ca47dcf16750f8d83afef |
| Current - Collector (Ic) (Max): | f8cc56260823e63e891e80728bae51e6 |
| Voltage - Collector Emitter Breakdown (Max): | 628cbc3e45d5bacb32414a526acf56ef |
| Vce Saturation (Max) @ Ib, Ic: | e9372f4e300c2c58b158a7fdca4ed556 |
| Current - Collector Cutoff (Max): | 359456234a5a215cd67b37cce8b8442a |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 1aa8e206496280cb6fa722271ef6511f |
| Power - Max: | 66a91901623788f8aca99203ca977e7e |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | 55ce755c497e7a4a96e8f6d89292982a |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 46bb638de2ea693de650d7f1c3115468 |
| Supplier Device Package: | 21023271cb741070ebf3efcc38cc7f20 |
