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See Product Specifications
| номер части: | 2N6667 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | de59b8a5968ca47dcf16750f8d83afef |
| Current - Collector (Ic) (Max): | 46f85f4ab5977146b21c80a7ef961080 |
| Voltage - Collector Emitter Breakdown (Max): | 5568a11e95c42251b4839598cb5b4518 |
| Vce Saturation (Max) @ Ib, Ic: | 559a5ed39a3d827b8d44d5ecdb8bc37f |
| Current - Collector Cutoff (Max): | 359456234a5a215cd67b37cce8b8442a |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 08ec846902f1b58dbabf6c3ef573bac7 |
| Power - Max: | b8a311ed3f21d724b699490a1101fe1b |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | 55ce755c497e7a4a96e8f6d89292982a |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 46bb638de2ea693de650d7f1c3115468 |
| Supplier Device Package: | 21023271cb741070ebf3efcc38cc7f20 |
