2N7000

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See Product Specifications

Mfr. #:

2N7000

Mfr.:

NTE Electronics, Inc

Описание:

MOSFET N-CHANNEL 60V 200MA TO92

Упаковка:

Bag

Datasheet:

2N7000 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2N7000
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NTE Electronics, Inc
Упаковка:	Bag
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	6753131b43c81d45a78a55a58477564b
Drive Voltage (Max Rds On, Min Rds On):	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	34a3446f9b31bf5ce58bed7aee129229
Vgs(th) (Max) @ Id:	2da3540dbfa7d901b7d797a5001bb2e7
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:	9599881b19ba103e54af4d61275d0e39
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	2f84ada388e0516613ee9bf116b4e076
Package / Case:	10ad7c3d9ef615310ca330c41d6c2435

In Stock: 5652

Stock:

5652 Can Ship Immediately