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See Product Specifications
| номер части: | BDV65 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | acf70af5797317fd532641fd68230c32 |
| Voltage - Collector Emitter Breakdown (Max): | 5568a11e95c42251b4839598cb5b4518 |
| Vce Saturation (Max) @ Ib, Ic: | 336d5ebc5436534e61d16e63ddfca327 |
| Current - Collector Cutoff (Max): | 336d5ebc5436534e61d16e63ddfca327 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 99d6c60b16c1a44475f7ce26f7c6b62d |
| Power - Max: | 1c7b9ff45e19d735d973366307ce0399 |
| Frequency - Transition: | 7171440a683a571cf79d1068e05f8894 |
| Operating Temperature: | 336d5ebc5436534e61d16e63ddfca327 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 1417705a4cf1e1705fc03ac84446b9ad |
| Supplier Device Package: | 61fbdcb46b01089e10efcd6e124e0d3f |
