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See Product Specifications
| номер части: | MJ10009 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 961eae0065d58eea563813a4d10cf3ac |
| Current - Collector (Ic) (Max): | ace78b86334ed64201bccb73e319b975 |
| Voltage - Collector Emitter Breakdown (Max): | 53acc560d6ddad5708f13429566dcdb7 |
| Vce Saturation (Max) @ Ib, Ic: | 9924f7599fa3e731a1d4c0e56d1f264c |
| Current - Collector Cutoff (Max): | 46edd5ae522cf8200c3a6a6618199c9a |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | e5b822757e2573b777c5be158540affc |
| Power - Max: | 7544ab7ec46d2fe419301d76f150b287 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | 724015988cf8db99d1178f4bc356855a |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | acacc2b55ee43fad1b569abde9a9b21c |
| Supplier Device Package: | d951b62dcd3ff3e2b9df0a3e52e82ddb |
