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See Product Specifications
| номер части: | MJ10012 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 961eae0065d58eea563813a4d10cf3ac |
| Current - Collector (Ic) (Max): | 46f85f4ab5977146b21c80a7ef961080 |
| Voltage - Collector Emitter Breakdown (Max): | a51e6c3b115ead349deb13cbf5a43f23 |
| Vce Saturation (Max) @ Ib, Ic: | b39f5a3c3d18c25686f0171a7de25e03 |
| Current - Collector Cutoff (Max): | 359456234a5a215cd67b37cce8b8442a |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 558512933196580d98dbeb4f68525b1e |
| Power - Max: | 7544ab7ec46d2fe419301d76f150b287 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | 724015988cf8db99d1178f4bc356855a |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | acacc2b55ee43fad1b569abde9a9b21c |
| Supplier Device Package: | d951b62dcd3ff3e2b9df0a3e52e82ddb |
