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See Product Specifications
| номер части: | NTE108 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - RF |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Voltage - Collector Emitter Breakdown (Max): | c848c43fe07598760b6ae77bbaac9f40 |
| Frequency - Transition: | ef8846b64ba3583da080c4684d3749a2 |
| Noise Figure (dB Typ @ f): | bdbe378857682e41ae75d5912636140b |
| Gain: | 0c1e949316c704b4cc2d3884741d364e |
| Power - Max: | 6123430f6c1aebe9b6b47f0304255cc2 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | c7985fdfd4970805d5753765e0879692 |
| Current - Collector (Ic) (Max): | 2e2b8b2c3556c3b861c5e33e2d78ffa7 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | eb14c87bf1665793a9b98abdb5766644 |
| Supplier Device Package: | 2f84ada388e0516613ee9bf116b4e076 |
