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See Product Specifications
| номер части: | NTE2018 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Arrays |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 4a7ace53691a5ab46bb511ab40fca1ce |
| Current - Collector (Ic) (Max): | a7ba2723f2ce3fb8673c85e5481e65d7 |
| Voltage - Collector Emitter Breakdown (Max): | ef3fbc276cb9f08e57f243ec2875d986 |
| Vce Saturation (Max) @ Ib, Ic: | c6394984816f5c9fe41055ebc400257f |
| Current - Collector Cutoff (Max): | 336d5ebc5436534e61d16e63ddfca327 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 336d5ebc5436534e61d16e63ddfca327 |
| Power - Max: | 6a0a215cc8b7cad4343d58bff081a04a |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | 190065f5abb3b3854b8058360a5abfdc |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 35366f984942aaa0074c055de5419b2e |
| Supplier Device Package: | f4260a349d6042b532ff8c8146c5ba12 |
