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See Product Specifications
| номер части: | NTE213 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | e5e40f3fe57770f170a10089997a057e |
| Voltage - Collector Emitter Breakdown (Max): | 5568a11e95c42251b4839598cb5b4518 |
| Vce Saturation (Max) @ Ib, Ic: | 68983d46f1ce1d0c79975ef69d7a2672 |
| Current - Collector Cutoff (Max): | 93459017182177d9aab6919e9c1331aa |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | f147246a6780928d82203572c4453ed4 |
| Power - Max: | acad63a78b1890ca38df696b64901f58 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | 9e4a109d6eb2847613e742d5a41a0d6f |
| Mounting Type: | 4bdb778fe01fdf35a3cdb6e87444f9c2 |
| Package / Case: | 1bcb4c002a259a3bdae8a5296c6a32f0 |
| Supplier Device Package: | 11e3297bfc9c8eb64572d790f5638724 |
