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See Product Specifications
| номер части: | NTE2355 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 2118df2aa458b1e26181f0df8cbeda82 |
| Current - Collector (Ic) (Max): | 63f9c0b014d9e8860c3239712547a74a |
| Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 |
| Resistor - Base (R1): | 62be411690721884738e929c9aa26f03 |
| Resistor - Emitter Base (R2): | 62be411690721884738e929c9aa26f03 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | a2f67c2b6733a8cee250a8b8a48984f4 |
| Vce Saturation (Max) @ Ib, Ic: | a3882f52b90ab7e1e720caf27d4ee908 |
| Current - Collector Cutoff (Max): | 53e8de3c9eceac47a1afcf3e46115044 |
| Frequency - Transition: | 8c36030ce9b51b65b427297115d6bff5 |
| Power - Max: | 5679da647e78a1a4c1fdd8f9981e2fc1 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 0bdc2d24d04ba200f36d95d519528d10 |
| Supplier Device Package: | b0dc0650082daba2197cdd56368c8198 |
