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See Product Specifications
| номер части: | NTE2365 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | 192ea1990df41f495cec1f25a3ca9750 |
| Voltage - Collector Emitter Breakdown (Max): | faca79d8bea430c6302af6f2e2f59d12 |
| Vce Saturation (Max) @ Ib, Ic: | 1f9e8300f0f3cbb5d30f85e131dfe95e |
| Current - Collector Cutoff (Max): | 359456234a5a215cd67b37cce8b8442a |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 488582ad93aa84a676b1777bea49aebb |
| Power - Max: | 483b78b136ab6263310027d62dec6364 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 4ace084224f93f0bb8fb693ddb81a360 |
| Supplier Device Package: | eefd8eafc3c07468d710824b8f8c7b34 |
