NTE5829

NTE5829

Images are for reference only
See Product Specifications

NTE5829
Описание:
R-800 PRV 50 A ANODE CASE
Упаковка:
Bag
Datasheet:
NTE5829 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:NTE5829
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:NTE Electronics, Inc
Упаковка:Bag
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):faca79d8bea430c6302af6f2e2f59d12
Current - Average Rectified (Io):1ae31b1f8bbb4b1326384e992bf0375f
Voltage - Forward (Vf) (Max) @ If:f5c047591a9a8bf40913de51d45cc2eb
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:0d493a4734eeac6ab1fcffd8c3c12611
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Package / Case:269957eda8272e1d0d7321d737f0e989
Supplier Device Package:fa502964a1478225fb0a589ed6dcf92d
Operating Temperature - Junction:82955589f255a30687a9852725e97d80
In Stock: 109
Stock:
109 Can Ship Immediately
  • Делиться:
Для использования с
1N486B TR TIN/LEAD
1N486B TR TIN/LEAD
Central Semiconductor Corp
DIODE GEN PURP 250V 200MA DO35
GS1010HE_R1_00001
GS1010HE_R1_00001
Panjit International Inc.
SURFACE GENERAL PURPOSE RECTIFIE
CDBQR0140R-HF
CDBQR0140R-HF
Comchip Technology
DIODE SCHOTTKY 40V 100MA 0402
SS34HM3_A/H
SS34HM3_A/H
Vishay General Semiconductor - Diodes Division
3A 40V SM SCHOTTKY RECT SMC
RGP10J-E3/73
RGP10J-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
R306100F
R306100F
Microchip Technology
STD RECTIFIER
VS-VSKE236/16PBF
VS-VSKE236/16PBF
Vishay General Semiconductor - Diodes Division
DIODE GP 1.6KV 230A INTAPAK
UGB15JT-E3/81
UGB15JT-E3/81
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 15A TO263AB
ESH2PCHE3/84A
ESH2PCHE3/84A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 2A DO220AA
CLS03(TE16L,PSD,Q)
CLS03(TE16L,PSD,Q)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 60V 10A L-FLAT
SS33HM6G
SS33HM6G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO214AB
RSFJL MQG
RSFJL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 500MA SUBSMA
Вас также может заинтересовать
47-20548-R
47-20548-R
NTE Electronics, Inc
H/S 1/4IN 48IN RED THIN
VHT1000M6.3
VHT1000M6.3
NTE Electronics, Inc
CAP ALUM 1000UF 20% 6.3V RADIAL
SMC1206C1D0
SMC1206C1D0
NTE Electronics, Inc
CAP CER 1PF 50V C0G/NP0 1206
90230
90230
NTE Electronics, Inc
CAP CER 3000PF 1KV Z5V RADIAL
NTE6007
NTE6007
NTE Electronics, Inc
R-200V 40A FAST REC AC
NTE2343
NTE2343
NTE Electronics, Inc
TRANS NPN DARL 120V 12A TO220
RLY240
RLY240
NTE Electronics, Inc
RELAY TIME DELAY 8MIN
LED-MC8
LED-MC8
NTE Electronics, Inc
MOUNTING CLIP FOR 8MM LED
501-0066
501-0066
NTE Electronics, Inc
POT 2.5K OHM 2W CARBON LINEAR
R74-11D1-3SM
R74-11D1-3SM
NTE Electronics, Inc
RELAY DPDT 1A 3VDC
50WM050
50WM050
NTE Electronics, Inc
RES CHAS MNT 50 OHM 1% 50W
HWCC322
HWCC322
NTE Electronics, Inc
RES 22K OHM 5% 1/2W AXIAL