NTE5883

NTE5883

Images are for reference only
See Product Specifications

NTE5883
Описание:
R-600PRV 12A ANODE CASE
Упаковка:
Bag
Datasheet:
NTE5883 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:NTE5883
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:NTE Electronics, Inc
Упаковка:Bag
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):9b63fe166715207d51445c226ada9c46
Current - Average Rectified (Io):0b85066ca7fc96c0d9083cec9ee69087
Voltage - Forward (Vf) (Max) @ If:2d22caeae48f05fa8a9541ce9c9ce117
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:33d694ddf8e678be77fcf583371ed34b
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:4bdb778fe01fdf35a3cdb6e87444f9c2
Package / Case:fb80c0eb7ed9981e55854ca87e313d55
Supplier Device Package:6e85b179a5fe900fb31219c393baf612
Operating Temperature - Junction:1a1a7862b3b5abe85ab6bb63480bbb5f
In Stock: 36
Stock:
36 Can Ship Immediately
  • Делиться:
Для использования с
P3D12005T2
P3D12005T2
PN Junction Semiconductor
DIODE SCHOTTKY 1200V 5A TO220-2
MUR415G
MUR415G
onsemi
DIODE GEN PURP 150V 4A DO201AD
BAV19WS-E3-18
BAV19WS-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 250MA SOD323
CMS21(TE12L,Q,M)
CMS21(TE12L,Q,M)
Toshiba Semiconductor and Storage
X35 PB-F DIODE M-FLAT MOQ=3000 V
MPG06DHE3/73
MPG06DHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A MPG06
TVR06J-E3/73
TVR06J-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 600MA DO204
MURS320HE3/9AT
MURS320HE3/9AT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 3A DO214AB
SE07PJ-E3/85A
SE07PJ-E3/85A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 700MA DO220
GB05SLT12-252
GB05SLT12-252
GeneSiC Semiconductor
DIODE SILICON 1.2KV 5A TO252
MUR305SHM6G
MUR305SHM6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
ES1AL MTG
ES1AL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
SF35G-AP
SF35G-AP
Micro Commercial Co
DIODE GPP HE 3A DO-201AD
Вас также может заинтересовать
47-20548-VT
47-20548-VT
NTE Electronics, Inc
H/S 1/4IN 48IN VIOT THIN
47-20348-GR
47-20348-GR
NTE Electronics, Inc
H/S 1/8IN 48IN GREY THIN
WT24-08-25
WT24-08-25
NTE Electronics, Inc
HOOK-UP 24AWG 600V GRAY 25'
NPA1M50
NPA1M50
NTE Electronics, Inc
CAP ALUM 1UF 20% 50V AXIAL
89082
89082
NTE Electronics, Inc
CAP CER 82PF 50V C0G/NP0 RADIAL
NTE4846
NTE4846
NTE Electronics, Inc
TVS DIODE 30VWM 48.4VC
NTE5075A
NTE5075A
NTE Electronics, Inc
DIODE ZENER 16V 1W DO35
NTE5099A
NTE5099A
NTE Electronics, Inc
DIODE ZENER 140V 1W DO35
NTE30085
NTE30085
NTE Electronics, Inc
LED-SMD RT ANG SUPER BLUE
R95-181
R95-181
NTE Electronics, Inc
SOCKET-DPDT 8-PIN OCTAL
SR1-0603-268
SR1-0603-268
NTE Electronics, Inc
RES 6.8K OHM 5% 1/16W 0603
SR1-0805-347
SR1-0805-347
NTE Electronics, Inc
RES 47K OHM 5% 1/8W 0805