NTE5890

NTE5890

Images are for reference only
See Product Specifications

NTE5890
Описание:
R-1000 PRV 12A CATH CASE
Упаковка:
Bag
Datasheet:
NTE5890 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:NTE5890
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:NTE Electronics, Inc
Упаковка:Bag
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Average Rectified (Io):0b85066ca7fc96c0d9083cec9ee69087
Voltage - Forward (Vf) (Max) @ If:2d22caeae48f05fa8a9541ce9c9ce117
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:fb6a6d6f827b4a91885eb25d32bb8c52
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:4bdb778fe01fdf35a3cdb6e87444f9c2
Package / Case:fb80c0eb7ed9981e55854ca87e313d55
Supplier Device Package:6e85b179a5fe900fb31219c393baf612
Operating Temperature - Junction:1a1a7862b3b5abe85ab6bb63480bbb5f
In Stock: 203
Stock:
203 Can Ship Immediately
  • Делиться:
Для использования с
ES1J
ES1J
SMC Diode Solutions
DIODE GEN PURP 600V 1A SMA
VS-6EVH06HM3/I
VS-6EVH06HM3/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE 600V SLIMDPAK
SD101BW-HE3-18
SD101BW-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 400MW 50V SOD123
AR4PJHM3_A/H
AR4PJHM3_A/H
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 2A TO277A
VS-C4PU3006LHN3
VS-C4PU3006LHN3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 15A TO247AD
VS-72HF140
VS-72HF140
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.4KV 70A DO203AB
VS-SD603C16S15C
VS-SD603C16S15C
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.6KV 600A B-43
AM2000-CT
AM2000-CT
Diotec Semiconductor
CUT-TAPE VERSION. STANDARD RECO
GP02-35-M3/73
GP02-35-M3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 3.5KV 250MA DO204
RSFJL MTG
RSFJL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 500MA SUBSMA
ES1JHR3G
ES1JHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AC
SIDC09D60E6X1SA3
SIDC09D60E6X1SA3
Infineon Technologies
DIODE SWITCHING 600V WAFER
Вас также может заинтересовать
04-ACC50
04-ACC50
NTE Electronics, Inc
ADJ CABLE CLAMP .935 INCH 10/BAG
WHS24-00-25
WHS24-00-25
NTE Electronics, Inc
HOOK-UP 24AWG 300V BLACK 25'
74-5SC800MA
74-5SC800MA
NTE Electronics, Inc
FUSE CERAMIC 800MA 250VAC 5X20MM
NTE5274AK
NTE5274AK
NTE Electronics, Inc
DIODE ZENER 47V 50W DO5
NTE2557
NTE2557
NTE Electronics, Inc
TRANS NPN DARL 200V 15A TO247
R03-14A10-240
R03-14A10-240
NTE Electronics, Inc
RELAY GEN PURPOSE 3PDT 10A 240V
QW1787BR
QW1787BR
NTE Electronics, Inc
RES 7.87K OHM 1% 1/4W AXIAL
EW182
EW182
NTE Electronics, Inc
RES 820 OHM 2% 1/8W AXIAL
2WD18
2WD18
NTE Electronics, Inc
RES 0.18 OHM 2% 2W AXIAL
54-505
54-505
NTE Electronics, Inc
SWITCH ROCKER SPDT 16A 125V
54-721
54-721
NTE Electronics, Inc
SWITCH ILLUM TIP TOGGLE
72-166-5
72-166-5
NTE Electronics, Inc
GRN INSULATOR FOR 72-167/168