NTE6120

NTE6120

Images are for reference only
See Product Specifications

NTE6120
Описание:
R-1600V 500A
Упаковка:
Bag
Datasheet:
NTE6120 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:NTE6120
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:NTE Electronics, Inc
Упаковка:Bag
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):4865a5a4f6ae5c36f871aacc284f3be1
Current - Average Rectified (Io):2c04fc3dbc660c3dfb2d47d4610473a4
Voltage - Forward (Vf) (Max) @ If:c4cacef1aa99333bbcc6f71723ef68f5
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:953e072f6fad605f8bc64a6f114cf2d8
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Package / Case:d9f767b2fb1e576ca488d5d4e6a8cfd3
Supplier Device Package:932c0dd9d63c92c34895745a691fc8ad
Operating Temperature - Junction:5a8b52f0d69cf87d9ed078ec3833bdd3
In Stock: 3
Stock:
3 Can Ship Immediately
  • Делиться:
Для использования с
S1FLJ-GS08
S1FLJ-GS08
Vishay General Semiconductor - Diodes Division
DIODE GP 600V 700MA DO219AB
BYG21KHE3_A/H
BYG21KHE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 800V 1.5A DO214
S5A-M3/57T
S5A-M3/57T
Vishay General Semiconductor - Diodes Division
DIODE GPP 5A 50V DO-214AB
VS-80APF06-M3
VS-80APF06-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 80A TO247AC
1N3911A
1N3911A
Microchip Technology
FAST RECOVERY RECTIFIER
JAN1N1184
JAN1N1184
Microchip Technology
DIODE GEN PURP 100V 35A DO203AB
A190B
A190B
Powerex Inc.
DIODE GEN PURP 300V 250A DO205AA
PMEG3005AESF315
PMEG3005AESF315
NXP USA Inc.
NOW NEXPERIA PMEG3005AE RECTIFIE
SS3P4LHM3/87A
SS3P4LHM3/87A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 3A TO277A
SS3P6LHM3/86A
SS3P6LHM3/86A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 3A TO277A
RSFKLHMTG
RSFKLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 500MA SUBSMA
ES2GHR5G
ES2GHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO214AA
Вас также может заинтересовать
WH618-02-100
WH618-02-100
NTE Electronics, Inc
HOOK-UP 18AWG 600V RED 100'
NEV150M6.3
NEV150M6.3
NTE Electronics, Inc
CAP ALUM 150UF 20% 6.3V RADIAL
MLR103K50
MLR103K50
NTE Electronics, Inc
CAP FILM 10000PF 10% 50VDC RAD
NTE5989
NTE5989
NTE Electronics, Inc
R-300 PRV 40A ANODE CASE
57-12D-8000-4
57-12D-8000-4
NTE Electronics, Inc
AC/DC DESKTOP ADAPTER 12V 96W
R51-1D70-12
R51-1D70-12
NTE Electronics, Inc
RELAY AUTO 70A 12VDC SPST
QW3430BR
QW3430BR
NTE Electronics, Inc
RES 430K OHM 1% 1/4W AXIAL
2W010
2W010
NTE Electronics, Inc
RES 10 OHM 5% 2W AXIAL
1W575
1W575
NTE Electronics, Inc
RES 7.5M OHM 2% 1W AXIAL
QW9D1
QW9D1
NTE Electronics, Inc
RES 9.1 OHM 5% 1/4W AXIAL
54-089
54-089
NTE Electronics, Inc
SWITCH ROCKER DPDT 20A 12V
54-037
54-037
NTE Electronics, Inc
SWITCH ROCKER DPDT 20A 12V