NTE640

NTE640

Images are for reference only
See Product Specifications

NTE640
Описание:
R-SCHOTTKY 40V 2A DO214AA
Упаковка:
Bag
Datasheet:
NTE640 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:NTE640
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:NTE Electronics, Inc
Упаковка:Bag
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:aaa0376e51a49c9332dde4f69ea77455
Voltage - DC Reverse (Vr) (Max):628cbc3e45d5bacb32414a526acf56ef
Current - Average Rectified (Io):5f5468d54f2b86e7e60fac196581d7d0
Voltage - Forward (Vf) (Max) @ If:d4b44ea943211880499b7d04586ddb82
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:a9ea43c10c97fa0def23894edeb07f7e
Capacitance @ Vr, F:31821c59616ce075509f2e10a4dfc492
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:38894d8db4510f24855cf840455e79c1
Supplier Device Package:354828ee2f961c444710b49072335f0d
Operating Temperature - Junction:b2db944416af296787012d8a4bee58d3
In Stock: 4328
Stock:
4328 Can Ship Immediately
  • Делиться:
Для использования с
P3D12005K2
P3D12005K2
PN Junction Semiconductor
DIODE SCHOTTKY 1200V 5A TO247-2
1SS403,H3F
1SS403,H3F
Toshiba Semiconductor and Storage
DIODE GEN PURP 200V 100MA USC
BAS20-AU_R1_000A1
BAS20-AU_R1_000A1
Panjit International Inc.
SURFACE MOUNT SWITCHING DIODE
SBR3M100SAF-13
SBR3M100SAF-13
Diodes Incorporated
SUPER BARRIER RECTIFIER SMAF T&R
CDBB5200-HF
CDBB5200-HF
Comchip Technology
DIODE SCHOTTKY 200V 5A DO214AA
UFS520J/TR13
UFS520J/TR13
Microchip Technology
DIODE GEN PURP 200V 5A DO214AB
VS-305U160
VS-305U160
Vishay General Semiconductor - Diodes Division
DIODE GP 1.6KV 330A DO205AB
M1022LC120
M1022LC120
IXYS
FAST DIODE
VS-12TQ035STRRPBF
VS-12TQ035STRRPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 35V 15A D2PAK
EGP10D-M3/73
EGP10D-M3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AL
SE40PGHM3/87A
SE40PGHM3/87A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 2.4A TO277A
RS1DL R3G
RS1DL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 800MA SUBSMA
Вас также может заинтересовать
04-06150SS
04-06150SS
NTE Electronics, Inc
CABLE TIE STAINLESS STEEL 100 BA
VHT4700M16
VHT4700M16
NTE Electronics, Inc
CAP ALUM 4700UF 20% 16V RADIAL
CFC-2.5
CFC-2.5
NTE Electronics, Inc
CAP-CEILING FAN 2.5UFD
MRC440V2
MRC440V2
NTE Electronics, Inc
CAP FILM 2UF 6% 440VAC RADIAL
TD.47M35
TD.47M35
NTE Electronics, Inc
CAP TANT 0.47UF 20% 35V RADIAL
76-IRT12-08
76-IRT12-08
NTE Electronics, Inc
PVC INS RING TERM 12-10WG
76-RT12-1/4C
76-RT12-1/4C
NTE Electronics, Inc
NON INS RING TERM 12-10WG 100 BA
NTE612
NTE612
NTE Electronics, Inc
VARACTOR-12 PF@4V
NTE128
NTE128
NTE Electronics, Inc
TRANS NPN 80V 1A TO39
69-LL-01
69-LL-01
NTE Electronics, Inc
LED LIGHT BAR 12VDC 11 IN
QW247
QW247
NTE Electronics, Inc
RES 4.7K OHM 2% 1/4W AXIAL
HWCC510
HWCC510
NTE Electronics, Inc
RES 1M OHM 5% 1/2W AXIAL