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See Product Specifications
| номер части: | NTE912 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Arrays |
| Производитель: | NTE Electronics, Inc |
| Упаковка: | Bag |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 598b79606e8f4d1ff4d43cdd96eac9f5 |
| Current - Collector (Ic) (Max): | 2e2b8b2c3556c3b861c5e33e2d78ffa7 |
| Voltage - Collector Emitter Breakdown (Max): | ee903aef3346060320481a070e30df50 |
| Vce Saturation (Max) @ Ib, Ic: | 0d70ea74c49aef67d119709835e2e8ec |
| Current - Collector Cutoff (Max): | 53e8de3c9eceac47a1afcf3e46115044 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | ffcf48e8954da645cbd2bd4dcb894cf9 |
| Power - Max: | 21057a8cee32b6d77549710a13c30be9 |
| Frequency - Transition: | 117b71385e70161fd0f7f198c055c926 |
| Operating Temperature: | 6113e5feb3ae4604db55235011ca6e99 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 0fb650ed348597bf1848f9ac69ab2c8f |
| Supplier Device Package: | a71a0a08f7b0605b5f2b27b7b127e9e5 |
