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See Product Specifications
| номер части: | 2N5551,412 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NXP USA Inc. |
| Упаковка: | Tube |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | d85f67955f6be9d55b2e0bf043351d00 |
| Voltage - Collector Emitter Breakdown (Max): | fbaf3c72fa8f43a3cedb18069593088d |
| Vce Saturation (Max) @ Ib, Ic: | bc238bed534454eae83abc6098b604d7 |
| Current - Collector Cutoff (Max): | 290f65d0733ef781596b9c3c593f983b |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | a23a0d1fb6398094cbadf4b8b7721c5f |
| Power - Max: | b1ae28d2bcf032aa52d3f27fa99828b4 |
| Frequency - Transition: | e44bd8212f6498a93630f3b4e927a576 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 10ad7c3d9ef615310ca330c41d6c2435 |
| Supplier Device Package: | 775aaf4acf8e3036c8c22ccdfd356aef |
