2N7000,126

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See Product Specifications

Mfr. #:

2N7000,126

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 60V 300MA TO92-3

Упаковка:

Tape & Box (TB)

Datasheet:

2N7000,126 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	2N7000,126
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tape & Box (TB)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	175d798919fabe4d5f9f862e54dd1a83
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	34a3446f9b31bf5ce58bed7aee129229
Vgs(th) (Max) @ Id:	25509f2d81b84ad0de9368a2b900ad19
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	0f7801aa92cab7233556d266081446fd
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	edfe93fad90c64e9d13aca8badee74c0
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	775aaf4acf8e3036c8c22ccdfd356aef
Package / Case:	10ad7c3d9ef615310ca330c41d6c2435