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See Product Specifications
| номер части: | 2PB709ASW,115 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NXP USA Inc. |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | 63f9c0b014d9e8860c3239712547a74a |
| Voltage - Collector Emitter Breakdown (Max): | 74cc1af3a16c063ab4efd11d0331fddd |
| Vce Saturation (Max) @ Ib, Ic: | 34d9480e59bec04a0c92fb20c7cc1887 |
| Current - Collector Cutoff (Max): | 3bf500b5fc240256a048b817a5ab154a |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | e6abcd38a5d976670167948eb34f27a9 |
| Power - Max: | ffd0459b4ef502205ee3430ebd978649 |
| Frequency - Transition: | 20e3a666c0f38875bdf9ce0635b95246 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 2cffa920bac58c995bd937e7a19a7bc4 |
| Supplier Device Package: | c4937a7af6425ed4f99ff5e1d5cd4746 |
