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номер части: | 2PD601ASW,115 |
Категория: | Discrete Semiconductor Products |
Подкатегория: | Transistors - Bipolar (BJT) - Single |
Производитель: | NXP USA Inc. |
Упаковка: | Bulk |
Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
Current - Collector (Ic) (Max): | 63f9c0b014d9e8860c3239712547a74a |
Voltage - Collector Emitter Breakdown (Max): | 1c53213259cb70ca6e36d7a9c97e7231 |
Vce Saturation (Max) @ Ib, Ic: | cb809df1a986e6a2517d344424539ae2 |
Current - Collector Cutoff (Max): | 3bf500b5fc240256a048b817a5ab154a |
DC Current Gain (hFE) (Min) @ Ic, Vce: | e6abcd38a5d976670167948eb34f27a9 |
Power - Max: | ffd0459b4ef502205ee3430ebd978649 |
Frequency - Transition: | 4e737283b3b5e11a92b4e86c5967a37e |
Operating Temperature: | a05f788eae82918882d3b91ce435570b |
Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
Package / Case: | 2cffa920bac58c995bd937e7a19a7bc4 |
Supplier Device Package: | c4937a7af6425ed4f99ff5e1d5cd4746 |