A2I08H040GNR1

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See Product Specifications

Mfr. #:

A2I08H040GNR1

Mfr.:

NXP USA Inc.

Описание:

IC RF LDMOS AMP

Упаковка:

Tape & Reel (TR)

Datasheet:

A2I08H040GNR1 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	A2I08H040GNR1
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - RF
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
Transistor Type:	d06d60e48aac6c664e5e98b762640ba0
Frequency:	a12261d95596eaba38f7a3ad7ab652bf
Gain:	120d125351144c35c9583d342d834295
Voltage - Test:	7457971f56f5eecf3196b1981970d84a
Current Rating (Amps):	336d5ebc5436534e61d16e63ddfca327
Noise Figure:	336d5ebc5436534e61d16e63ddfca327
Current - Test:	3429e5a3b6c17c320ba63e4b49079db1
Power - Output:	19482158a8b38fe1ca8d0107f694472d
Voltage - Rated:	07ec5de588af69453712bad1d6d91197
Package / Case:	841da0ba3a58262c7fb9936a8fe7c358
Supplier Device Package:	b810622d13e6cad2bf1aba052fd9253f

In Stock: 4355

Stock:

4355 Can Ship Immediately