A3G26H200W17SR3

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See Product Specifications

Mfr. #:

A3G26H200W17SR3

Mfr.:

NXP USA Inc.

Описание:

AIRFAST RF POWER GAN TRANSISTOR,

Упаковка:

Tape & Reel (TR)

Datasheet:

A3G26H200W17SR3 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	A3G26H200W17SR3
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - RF
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	336d5ebc5436534e61d16e63ddfca327
Frequency:	80ad7aabae7258c5ad9ef3d798682b70
Gain:	51c67b1fe3fb4497cba575e68b20596a
Voltage - Test:	362a4cffe73429698e9b8c125286fb77
Current Rating (Amps):	336d5ebc5436534e61d16e63ddfca327
Noise Figure:	336d5ebc5436534e61d16e63ddfca327
Current - Test:	2ea462801769e2ea7ed82b45ab1b2ca1
Power - Output:	1606aca7d2fe95a5ca7b03843c75e3b2
Voltage - Rated:	8a21b385d38a4208023007fd7b0d7d33
Package / Case:	84cb60bc2a2539b084d52a509c20dd91
Supplier Device Package:	84cb60bc2a2539b084d52a509c20dd91

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Stock:

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