BAP55L,315

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See Product Specifications

Mfr. #:

BAP55L,315

Mfr.:

NXP USA Inc.

Описание:

RF DIODE PIN 50V 500MW DFN1006-2

Упаковка:

Tape & Reel (TR)

Datasheet:

BAP55L,315 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	BAP55L,315
Категория:	Discrete Semiconductor Products
Подкатегория:	Diodes - RF
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
Diode Type:	e611ce39b7557fa3e0282cd4f1bfd385
Voltage - Peak Reverse (Max):	ef3fbc276cb9f08e57f243ec2875d986
Current - Max:	63f9c0b014d9e8860c3239712547a74a
Capacitance @ Vr, F:	6c332d331236f9a01dd4bd831dee7e12
Resistance @ If, F:	51b13284af58eceaaaddd960c02f84cc
Power Dissipation (Max):	518423de9d41db9800c9bf822055b790
Operating Temperature:	55ce755c497e7a4a96e8f6d89292982a
Package / Case:	315aca42a9d5cb80bac580a951a57dab
Supplier Device Package:	dd484b49eeb22945aef3f880c68103ec