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See Product Specifications
| номер части: | BC856B/DG/B3235 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NXP USA Inc. |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | 63f9c0b014d9e8860c3239712547a74a |
| Voltage - Collector Emitter Breakdown (Max): | 07ec5de588af69453712bad1d6d91197 |
| Vce Saturation (Max) @ Ib, Ic: | 570eb843f65120412dc46930193d5571 |
| Current - Collector Cutoff (Max): | 6ba12d3e2782370fe88fee1a02c61647 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | cde794ea35717eff9160f4df933bc39d |
| Power - Max: | 4fc51ef5c84234f5674c824aac586f27 |
| Frequency - Transition: | 4e737283b3b5e11a92b4e86c5967a37e |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 51bf93173785f0f3fc2d8b70cf119689 |
| Supplier Device Package: | f0a0660dda21f7b338489b4f9c96cbed |
