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See Product Specifications
| номер части: | BC856BT115 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NXP USA Inc. |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | 63f9c0b014d9e8860c3239712547a74a |
| Voltage - Collector Emitter Breakdown (Max): | 07ec5de588af69453712bad1d6d91197 |
| Vce Saturation (Max) @ Ib, Ic: | a25e44daca052f7c756d3b944569102d |
| Current - Collector Cutoff (Max): | 6ba12d3e2782370fe88fee1a02c61647 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | b2beef7bf2cae2409e0039a4c5968dd9 |
| Power - Max: | 0e9fa846564772a23d270a6aaa046f54 |
| Frequency - Transition: | 4e737283b3b5e11a92b4e86c5967a37e |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | b0007eeb26c56df960a54f9851bcc1aa |
| Supplier Device Package: | 2e010b833edb256c3274bfba1c9f9a23 |
