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See Product Specifications
| номер части: | BCM857DS115 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Arrays |
| Производитель: | NXP USA Inc. |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 2b4d2c15235c2fb49855b54bf1d670b3 |
| Current - Collector (Ic) (Max): | 8fa6a3a617ed852de22fab67a97483fa |
| Voltage - Collector Emitter Breakdown (Max): | 34b97bb08e7a693c60f72a302259d75e |
| Vce Saturation (Max) @ Ib, Ic: | a25e44daca052f7c756d3b944569102d |
| Current - Collector Cutoff (Max): | 6ba12d3e2782370fe88fee1a02c61647 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 1d515f0dd4fdfd099acf39c78fe38a69 |
| Power - Max: | aa885ad17b77bed2bb194a794f486066 |
| Frequency - Transition: | 119a77a7a128768df97be06f7e37fa42 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | ba9086440b12ae203cf29e9ec113b2c0 |
| Supplier Device Package: | 3e6b96391caa3c5529c8a77c2a1613ae |
