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See Product Specifications
| номер части: | BF370,112 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NXP USA Inc. |
| Упаковка: | Bulk |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | 63f9c0b014d9e8860c3239712547a74a |
| Voltage - Collector Emitter Breakdown (Max): | 61cbd7241775ff623ee62ceace2ff07c |
| Vce Saturation (Max) @ Ib, Ic: | 336d5ebc5436534e61d16e63ddfca327 |
| Current - Collector Cutoff (Max): | 200be65efe041361ef345f587806075a |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 84078ddbb900547413d9ff41b275cb87 |
| Power - Max: | 518423de9d41db9800c9bf822055b790 |
| Frequency - Transition: | e17e5b23242561cb2143c25d0da83a1b |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 10ad7c3d9ef615310ca330c41d6c2435 |
| Supplier Device Package: | 775aaf4acf8e3036c8c22ccdfd356aef |
