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See Product Specifications
| номер части: | BF423,112 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | NXP USA Inc. |
| Упаковка: | Bulk |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | 4f2c7696497d474eaee0a6de96e028ad |
| Voltage - Collector Emitter Breakdown (Max): | c5cbb7b66561ae3dbbdcebae7b0fa3f9 |
| Vce Saturation (Max) @ Ib, Ic: | a5655696f715d423f1c41fcde0e72ef4 |
| Current - Collector Cutoff (Max): | 3bf500b5fc240256a048b817a5ab154a |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 623591e2f5ea85ee1ed3072b242a92eb |
| Power - Max: | 5285b6e159a34b5fff4e3c55f174052d |
| Frequency - Transition: | 7171440a683a571cf79d1068e05f8894 |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 10ad7c3d9ef615310ca330c41d6c2435 |
| Supplier Device Package: | 775aaf4acf8e3036c8c22ccdfd356aef |
