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See Product Specifications
| номер части: | BFG10W/X,115 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - RF |
| Производитель: | NXP USA Inc. |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Voltage - Collector Emitter Breakdown (Max): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Frequency - Transition: | 5d5fb65c2abb6f85cb9640d49b66a225 |
| Noise Figure (dB Typ @ f): | 336d5ebc5436534e61d16e63ddfca327 |
| Gain: | 336d5ebc5436534e61d16e63ddfca327 |
| Power - Max: | 9c5f6c59e07de7e4bd3ff7ee8a52c109 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 8009d9a0d44a1f5b9755dec282a4325b |
| Current - Collector (Ic) (Max): | 1694085494e6ba5276d39d8d0d7aba9b |
| Operating Temperature: | dfb4ad46e1ac805451b8f397e97630b4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 9f4f03801214b0ff6555c5c16d7c32ad |
| Supplier Device Package: | 780f5203111b9405e0a2a3db2934f8d1 |
