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See Product Specifications
| номер части: | BFG410W,115 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - RF |
| Производитель: | NXP USA Inc. |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Voltage - Collector Emitter Breakdown (Max): | bd7f14ca47e6ffb3fc6ea492f7ea02d5 |
| Frequency - Transition: | 166de59e28c8b2be71c7702ef60b4496 |
| Noise Figure (dB Typ @ f): | b816d898b9009b5b29a58c4564bae4eb |
| Gain: | 5bb17171ce5f6e48e14761c8b137597e |
| Power - Max: | c30fb2db798ac7d46b3d4ea733bdf39b |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 27bca2a2803fedd7ff02e0dc7c4c6f82 |
| Current - Collector (Ic) (Max): | 0543336c2c47d463ea8f7acb9997634f |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | a855c364a8dbd6d0fe3b0b0928254d58 |
| Supplier Device Package: | 6d8906fd724233f045c3d43109f8a765 |
