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See Product Specifications
| номер части: | BFG520W,115 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - RF |
| Производитель: | NXP USA Inc. |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Voltage - Collector Emitter Breakdown (Max): | c848c43fe07598760b6ae77bbaac9f40 |
| Frequency - Transition: | 24f448c86207b00eba1a71a6ce69f364 |
| Noise Figure (dB Typ @ f): | 67da18d381f6c5671bf90cbb81a6adf4 |
| Gain: | 336d5ebc5436534e61d16e63ddfca327 |
| Power - Max: | 7a8c59f1ca1e353fce53b5236a58081c |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 8e99cfcb207f8812b45e2bd7d8d4635d |
| Current - Collector (Ic) (Max): | a67b1e401805019e230a069d89705435 |
| Operating Temperature: | dfb4ad46e1ac805451b8f397e97630b4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | 9f4f03801214b0ff6555c5c16d7c32ad |
| Supplier Device Package: | 780f5203111b9405e0a2a3db2934f8d1 |
