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See Product Specifications
| номер части: | BFU660F,115 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - RF |
| Производитель: | NXP USA Inc. |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Voltage - Collector Emitter Breakdown (Max): | 3f4fcf92bed191364d59f61439db8d0b |
| Frequency - Transition: | 10189c841954def94b6f715892c64c15 |
| Noise Figure (dB Typ @ f): | ad3fea3d46d99217319eb962a7a89da3 |
| Gain: | 364fe32b1501dc251ad9f4e700c7ffa0 |
| Power - Max: | 79eb816eb5602a47f17b2a457c6d5bfa |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | a2754a677dfe3625e8eabb4f7a16ba0a |
| Current - Collector (Ic) (Max): | d9da0e7ee9c74d127a13d42192dd78ec |
| Operating Temperature: | a05f788eae82918882d3b91ce435570b |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | de34e348555ad8f17019c361ea6ccd17 |
| Supplier Device Package: | 43b1fb1bc1761c10529c3caded4d771b |
