BLF10M6200112

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See Product Specifications

Mfr. #:

BLF10M6200112

Mfr.:

NXP USA Inc.

Описание:

POWER LDMOS TRANSISTOR

Упаковка:

Bulk

Datasheet:

BLF10M6200112 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	BLF10M6200112
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - Bipolar (BJT) - Single
Производитель:	NXP USA Inc.
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	336d5ebc5436534e61d16e63ddfca327
Current - Collector (Ic) (Max):	336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):	336d5ebc5436534e61d16e63ddfca327
Vce Saturation (Max) @ Ib, Ic:	336d5ebc5436534e61d16e63ddfca327
Current - Collector Cutoff (Max):	336d5ebc5436534e61d16e63ddfca327
DC Current Gain (hFE) (Min) @ Ic, Vce:	336d5ebc5436534e61d16e63ddfca327
Power - Max:	336d5ebc5436534e61d16e63ddfca327
Frequency - Transition:	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	336d5ebc5436534e61d16e63ddfca327
Package / Case:	336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:	336d5ebc5436534e61d16e63ddfca327

In Stock: 1150

Stock:

1150 Can Ship Immediately