BLF8G10LS-160,112

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See Product Specifications

Mfr. #:

BLF8G10LS-160,112

Mfr.:

NXP USA Inc.

Описание:

RF PFET, 1-ELEMENT, ULTRA HIGH F

Упаковка:

Tube

Datasheet:

BLF8G10LS-160,112 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	BLF8G10LS-160,112
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - RF
Производитель:	NXP USA Inc.
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:	c01695a5a671e8245b2b380214c496d2
Frequency:	1711e839a1fedc2fc077d1708c6ebc28
Gain:	304c6e5a0d18ef10f333f5dea9ef9e25
Voltage - Test:	6f065265b5ad79aa8b78335bb14c6420
Current Rating (Amps):	84dc79c0bef3af5352f55c6435e3ab5e
Noise Figure:	336d5ebc5436534e61d16e63ddfca327
Current - Test:	0b31fc4d5c485bbbcc36cdce9886d2ba
Power - Output:	533e524c0f7956cad3f190eddd8ab8fd
Voltage - Rated:	07ec5de588af69453712bad1d6d91197
Package / Case:	d8cb448387f457fbc77c781f7555d487
Supplier Device Package:	26a065b48705bbb5d622a7c4ef5cb0ce

In Stock: 0

Stock:

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