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See Product Specifications
| номер части: | BLS3135-10,114 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - RF |
| Производитель: | NXP USA Inc. |
| Упаковка: | Tray |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Voltage - Collector Emitter Breakdown (Max): | cce06cfe314739cd67d02d3055aa28c4 |
| Frequency - Transition: | 9709d23f942d5f54bdc6dbd66a40de42 |
| Noise Figure (dB Typ @ f): | 336d5ebc5436534e61d16e63ddfca327 |
| Gain: | 807809d9f439433419cbc21f5373f400 |
| Power - Max: | 1606aca7d2fe95a5ca7b03843c75e3b2 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | c809352acde6c42533f9f2a65914df2f |
| Current - Collector (Ic) (Max): | c17ecb92d2a18ce25e78874e20fe4ab5 |
| Operating Temperature: | 51a4dd9c15d0a730371e943785f48353 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Package / Case: | c8b004f47c5e8a930d10641cf59c55ae |
| Supplier Device Package: | 857048e7a128f033945c89ac6d6662d6 |
