BS108/01,126

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See Product Specifications

Mfr. #:

BS108/01,126

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 200V 300MA TO92-3

Упаковка:

Tape & Box (TB)

Datasheet:

BS108/01,126 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	BS108/01,126
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tape & Box (TB)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:	d48ef8c0e68ee05316e2636b296ffa98
Drive Voltage (Max Rds On, Min Rds On):	08a3325a77370c278b88423fc308a315
Rds On (Max) @ Id, Vgs:	c98aa2acf8a7a81dd06c99f3cf514d0e
Vgs(th) (Max) @ Id:	7ad1c652e03e9a2ba5e5f230cb1d0161
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	80ce8f6fe6a3298ac1c4b03e5b916f6b
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	4c6a955db65e87d580766aee735f1644
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	775aaf4acf8e3036c8c22ccdfd356aef
Package / Case:	10ad7c3d9ef615310ca330c41d6c2435