BSH112,235

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See Product Specifications

Mfr. #:

BSH112,235

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 60V 300MA TO236AB

Упаковка:

Tape & Reel (TR)

Datasheet:

BSH112,235 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	BSH112,235
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	d48ef8c0e68ee05316e2636b296ffa98
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	34a3446f9b31bf5ce58bed7aee129229
Vgs(th) (Max) @ Id:	25509f2d81b84ad0de9368a2b900ad19
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	9884d8b7fc60ad43c98d6d70ea13a6eb
Input Capacitance (Ciss) (Max) @ Vds:	0f7801aa92cab7233556d266081446fd
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	582acc1a36bd6c8fb6e90f7cb8cd801e
Operating Temperature:	55ce755c497e7a4a96e8f6d89292982a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	d3328c08dff2db38101f191083bd5562
Package / Case:	51bf93173785f0f3fc2d8b70cf119689