BUK652R1-30C,127

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See Product Specifications

Mfr. #:

BUK652R1-30C,127

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 30V 120A TO220AB

Упаковка:

Tube

Datasheet:

BUK652R1-30C,127 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	BUK652R1-30C,127
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	b1be509671d214bd598752c2a709fdac
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	5d3713acf75ca9c3700601c133292e3f
Vgs(th) (Max) @ Id:	99e0a524c2171291fa5c4f9115ba6ab6
Gate Charge (Qg) (Max) @ Vgs:	2149c3bc91991f4e04719797192fb9cb
Vgs (Max):	7e789298058bfb7cfeeb61a9dcda2972
Input Capacitance (Ciss) (Max) @ Vds:	c9e54e5c5ef61c8b98f3918a5a0a3061
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	beb616dee7c435a13d90999375f5b529
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	9b3b590b14408ced9e56cc56696084a1
Package / Case:	46bb638de2ea693de650d7f1c3115468