BUK662R7-55C,118

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Mfr. #:

BUK662R7-55C,118

Mfr.:

NXP USA Inc.

Описание:

PFET, 120A I(D), 55V, 0.0044OHM,

Упаковка:

Bulk

Datasheet:

BUK662R7-55C,118 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	BUK662R7-55C,118
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	2f23d6284d881f9576110d827b42bb45
Current - Continuous Drain (Id) @ 25°C:	b1be509671d214bd598752c2a709fdac
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	d1977782f15125c37ee312210ba7752c
Vgs(th) (Max) @ Id:	99e0a524c2171291fa5c4f9115ba6ab6
Gate Charge (Qg) (Max) @ Vgs:	3ba2dc6aec7e7a35e172c7db6c4365da
Vgs (Max):	7e789298058bfb7cfeeb61a9dcda2972
Input Capacitance (Ciss) (Max) @ Vds:	716e9dc7c4f7d22c241cdfaffaa217d7
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	28434c22f0d430a3b0cf5aca8a9fe1dd
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	28dc10fa1251e54eadc93e4958741fed
Package / Case:	99446f4470b43888d0c78d7d2cdfc956