BUK6E2R0-30C127

BUK6E2R0-30C127

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BUK6E2R0-30C127
Mfr.:
Описание:
N-CHANNEL POWER MOSFET
Упаковка:
Bulk
Datasheet:
BUK6E2R0-30C127 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:BUK6E2R0-30C127
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:NXP USA Inc.
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:b1be509671d214bd598752c2a709fdac
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:61448654b6514eac3772bc14c05218a9
Vgs(th) (Max) @ Id:99e0a524c2171291fa5c4f9115ba6ab6
Gate Charge (Qg) (Max) @ Vgs:dc76b769b737c9108d30ba64b88a44b9
Vgs (Max):7e789298058bfb7cfeeb61a9dcda2972
Input Capacitance (Ciss) (Max) @ Vds:e8df38801d3cbd7a0105348c56b5f85a
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):28434c22f0d430a3b0cf5aca8a9fe1dd
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:e7d1654b091636fc60031c07098afbfb
Package / Case:3c85f5f088979d743b17a76deb22d687
In Stock: 4728
Stock:
4728 Can Ship Immediately
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