BUK6E2R0-30C127

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See Product Specifications

Mfr. #:

BUK6E2R0-30C127

Mfr.:

NXP USA Inc.

Описание:

N-CHANNEL POWER MOSFET

Упаковка:

Bulk

Datasheet:

BUK6E2R0-30C127 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	BUK6E2R0-30C127
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Bulk
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	b1be509671d214bd598752c2a709fdac
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	61448654b6514eac3772bc14c05218a9
Vgs(th) (Max) @ Id:	99e0a524c2171291fa5c4f9115ba6ab6
Gate Charge (Qg) (Max) @ Vgs:	dc76b769b737c9108d30ba64b88a44b9
Vgs (Max):	7e789298058bfb7cfeeb61a9dcda2972
Input Capacitance (Ciss) (Max) @ Vds:	e8df38801d3cbd7a0105348c56b5f85a
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	28434c22f0d430a3b0cf5aca8a9fe1dd
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e7d1654b091636fc60031c07098afbfb
Package / Case:	3c85f5f088979d743b17a76deb22d687

In Stock: 4728

Stock:

4728 Can Ship Immediately