BUK7E2R3-40E,127-NXP

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Mfr. #:

Mfr.:

NXP USA Inc.

Описание:

PFET, 120A I(D), 40V, 0.0023OHM,

Упаковка:

Tube

Datasheet:

BUK7E2R3-40E,127-NXP Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	BUK7E2R3-40E,127-NXP
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:	b1be509671d214bd598752c2a709fdac
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	c8be37d33b094dcba5502aa2cc8a6485
Vgs(th) (Max) @ Id:	e059cfdd0b6079599844a290801e2b56
Gate Charge (Qg) (Max) @ Vgs:	fe937f81134eb90df05f34eacd99ff94
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	0e2f1433942392b8db6b16d1d8713cd1
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	dc5985b5d19e703e3b39f97bc039a8c4
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e7d1654b091636fc60031c07098afbfb
Package / Case:	3c85f5f088979d743b17a76deb22d687

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Stock:

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