BUK9E04-30B,127

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See Product Specifications

Mfr. #:

BUK9E04-30B,127

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 30V 75A I2PAK

Упаковка:

Tube

Datasheet:

BUK9E04-30B,127 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	BUK9E04-30B,127
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tube
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	2fc830bfd797ff874a4ada6c6cd6f876
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	af31e117323f91c75ac8ddb30bd3a1e9
Vgs(th) (Max) @ Id:	25509f2d81b84ad0de9368a2b900ad19
Gate Charge (Qg) (Max) @ Vgs:	06075a33258f4406a801af2f6bbbb0c6
Vgs (Max):	9884d8b7fc60ad43c98d6d70ea13a6eb
Input Capacitance (Ciss) (Max) @ Vds:	488fe2574e79b99b128b63cc224e1955
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	523a6b94d8813329f961e746d15d4003
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	e7d1654b091636fc60031c07098afbfb
Package / Case:	3c85f5f088979d743b17a76deb22d687