IRFR220,118

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See Product Specifications

Mfr. #:

IRFR220,118

Mfr.:

NXP USA Inc.

Описание:

MOSFET N-CH 200V 4.8A DPAK

Упаковка:

Tape & Reel (TR)

Datasheet:

IRFR220,118 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IRFR220,118
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	NXP USA Inc.
Упаковка:	Tape & Reel (TR)
Product Status:	ec30c235d0eb792797af1aa1d11759a7
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	b86aa01bc1f9484a191794819edcfc06
Current - Continuous Drain (Id) @ 25°C:	5d69839a83f34d1d17a5ad1e35def2a7
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	ea39088be25aa48dfe1e8e2ac2aa4626
Vgs(th) (Max) @ Id:	9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:	f7fb58f6f88663872c1cfe2690a9fe45
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	1fc9ee5a53facf079b586ce585b37835
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	0c6019a9db9912572c44701aada80fd8
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	26e4778ee70ff342a4cdee16eb8f56f1
Package / Case:	d6d5b809beb9f171e5b4097664b4dd95