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See Product Specifications
| номер части: | PBRN123ES,126 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Производитель: | NXP USA Inc. |
| Упаковка: | Tape & Box (TB) |
| Product Status: | ec30c235d0eb792797af1aa1d11759a7 |
| Transistor Type: | 2118df2aa458b1e26181f0df8cbeda82 |
| Current - Collector (Ic) (Max): | 6a9cc9d6e46dd6f45f7e1232f9252d5c |
| Voltage - Collector Emitter Breakdown (Max): | 628cbc3e45d5bacb32414a526acf56ef |
| Resistor - Base (R1): | e85102c5e32a145a3450a496c2a5e52d |
| Resistor - Emitter Base (R2): | e85102c5e32a145a3450a496c2a5e52d |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 0bdca0186ec18ebd1f0b60c1a12c6ade |
| Vce Saturation (Max) @ Ib, Ic: | 6744313da0b3bd5795436d99a32820b5 |
| Current - Collector Cutoff (Max): | 53e8de3c9eceac47a1afcf3e46115044 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Power - Max: | 90bcbd4d5aa00f46682087ffc3f45cd6 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 10ad7c3d9ef615310ca330c41d6c2435 |
| Supplier Device Package: | 775aaf4acf8e3036c8c22ccdfd356aef |
